Zhang's Theorem is a crucial principle in the study of heterojunction bipolar transistors (HBTs) that describes the condition for achieving optimal performance in these devices by ensuring maximum current gain and minimal base width. It connects the material properties and the physical dimensions of the device to enhance its efficiency, thus playing a vital role in the design of advanced semiconductor devices. Understanding this theorem allows engineers to predict how changes in the structure of HBTs can influence their electrical characteristics.
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