Forward bias is a condition in semiconductor devices, particularly in p-n junctions, where the p-type material is connected to a higher voltage than the n-type material, allowing current to flow easily through the junction. This configuration reduces the potential barrier at the junction, enabling charge carriers (holes and electrons) to recombine and thus allowing electrical current to pass through the device. Forward bias is crucial for the operation of devices like diodes and transistors, influencing their performance in electronic circuits.
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