Solid State Physics
Breakdown voltage is the minimum reverse-bias voltage applied to a diode, such as a p-n junction, that causes a significant increase in current through the device due to the breakdown of the depletion region. This phenomenon occurs when the electric field across the junction becomes strong enough to allow charge carriers to gain enough energy to overcome the potential barrier, resulting in a rapid increase in conduction. It is critical in determining the limits of operation for semiconductor devices and affects their stability and performance.
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