Exciton binding energy refers to the energy required to dissociate an exciton into its constituent electron and hole. It is a crucial parameter in understanding the stability of excitons, which are bound states formed when an electron in a semiconductor absorbs energy and is excited to a higher energy level, leaving behind a hole. This concept is particularly important in the context of quantum well structures, where the unique confinement effects can significantly enhance exciton binding energy, impacting various optoelectronic applications.
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